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Effect of Cerium on Structural and Dielectric Properties of Modified BiFeO3-PbTiO3 Ceramics for Photovoltaic Applications.

Authors :
Parida, S. K.
Swain, M. K.
Bhuyan, R. K.
Kisan, B.
Choudhary, RNP
Source :
Journal of Electronic Materials; Aug2021, Vol. 50 Issue 8, p4685-4695, 11p
Publication Year :
2021

Abstract

In this communication, the cerium (Ce) modified (Bi<subscript>0.4</subscript>Fe<subscript>0.4</subscript>)(Pb<subscript>0.6</subscript>Ti<subscript>0.3</subscript>Ce<subscript>0.3</subscript>)O<subscript>3</subscript> (BF-PT) ceramics is prepared by conventional solid-state reaction technique. The compound is found to crystallize in the rhombohedral crystal system with space group R-3c (#167). The refined lattice parameters are a = b = 4.989 Å, c = 17.062 Å, α = β = 90 ∘ , γ = 120 ∘ , V = 367.78 Å<superscript>3</superscript> and ρ = 2.71 g/cm<superscript>3</superscript> (JCPDS No.-00-005-0586). The average crystallite size and lattice micro-strain in the ceramics are estimated at 47.6 nm and 0.117% respectively. Scanning electron microscopy analysis indicates low porosity and well-defined grain boundaries, with an average grain size of 13.7 μm. Raman spectroscopy confirms the presence of all constituent elements and ferroelectric character. Ultraviolet–visible (UV–Vis) spectroscopy analysis suggests a bandgap of 1.72 eV for the modified BF-BT ceramics, which is suitable for photovoltaic applications. The study of complex impedance suggests a Cole–Cole-type relaxation with a decrease in bulk resistance from 6.283 × 10<superscript>13 </superscript>Ω cm<superscript>2</superscript> at 25°C to 1.783 × 10<superscript>4 </superscript>Ω cm<superscript>2</superscript> at 500°C, confirming the negative temperature coefficient of resistance. The calculated activation energies are 849.8 meV, 706.5 meV, 575.1 meV, and 499.4 meV at 1 kHz, 10 kHz, 100 kHz, and 1000 kHz, indicating ionization of oxygen vacancy and the involvement of the released electrons in the hopping conduction process, and support a thermally activated conduction mechanism. The increase in the peak frequency difference between the Z ″ and M ″ spectrum with temperature suggesting a non-Debye-type relaxation in the material. The material is characterized to a high dielectric constant and low tangent loss suitable for optoelectronic devices. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
50
Issue :
8
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
151104092
Full Text :
https://doi.org/10.1007/s11664-021-09016-1