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Electrodeposition of ZnS Thin Films by Complexing Agent-Free Electrolyte Containing Sodium Thiosulfate as the Sulfur Precursor.

Authors :
Madhuwanthi, H. M. L. U.
Mahanama, G. D. K.
De Silva, D. S. M.
Source :
Journal of Electronic Materials; Aug2021, Vol. 50 Issue 8, p4324-4332, 9p
Publication Year :
2021

Abstract

Thin films of zinc sulphide (ZnS) were prepared by a facile, economical, and scalable electrochemical method as a buffer layer for a CdS/CdTe based solar cell. Herein, a three-electrode cell in a complexing agent-free electrolyte containing 0.1 mol/L Na<subscript>2</subscript>S<subscript>2</subscript>O<subscript>3</subscript> and 0.1 mol/L ZnSO<subscript>4</subscript> was employed for the deposition of ZnS. The electrodeposition conditions (temperature: 30°C, pH: 4.2, cathodic potential: −1.10 V and deposition time: 90 min) were identified to grow an ideal thin film of ZnS on fluorine-doped tin oxide (FTO)-coated glass substrate, applying moderate stirring of 60 rpm. In material characterization of heat-treated samples (300°C, 10 min), the optical absorption measurement depicted a direct energy bandgap of 3.64 eV with low light absorbance and a blueshift from bulk ZnS. Scanning electron microscopy and atomic force microscopy studies demonstrated the uniform distribution of ZnS grains over the FTO glass substrate, and x-ray diffraction analysis revealed an amorphous structural nature of ZnS. The charge carrier density and flat-band potential of the ZnS material were determined as 1.19 × 10<superscript>−19</superscript> cm<superscript>−3</superscript> and −0.59 V, respectively, by Mott–Schottky analysis. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
50
Issue :
8
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
151104039
Full Text :
https://doi.org/10.1007/s11664-021-08948-y