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Improved optical, electrochemical and photovoltaic properties of dye-sensitized solar cell composed of rare earth-doped zinc oxide.

Authors :
Sehgal, Preeti
Narula, Anudeep Kumar
Source :
Journal of Materials Science: Materials in Electronics; Jun2021, Vol. 32 Issue 12, p16612-16622, 11p
Publication Year :
2021

Abstract

The double composite layer composed of europium and terbium doped zinc oxide (Eu<superscript>3+</superscript>,Tb<superscript>3+</superscript>@ZnO) as downconversion material (DC) and neodymium and ytterbium-doped zinc oxide (Nd<superscript>3+</superscript>,Yb<superscript>3+</superscript>@ZnO) as upconversion materials (UC) was prepared and used as photoanodes to achieve the higher photovoltaic efficiency of dye sensitized solar cell(DSSCs). The double composite layer FTO/Eu<superscript>3</superscript> + ,Tb<superscript>3+</superscript>@ZnO/TiO<subscript>2</subscript>/ Nd<superscript>3+</superscript>,Yb<superscript>3+</superscript>@ZnO have two disparate units; one provide downconversion luminescence by Ultraviolet excitation assigned to <superscript>7</superscript>F<subscript>0</subscript>-<superscript>5</superscript>L<subscript>6</subscript> of Eu<superscript>3+</superscript>, <superscript>7</superscript>D<subscript>4</subscript>-<superscript>7</superscript>F<subscript>5</subscript>, of Tb<superscript>3+</superscript>, <superscript>5</superscript>D<subscript>4</subscript>-<superscript>7</superscript>F<subscript>4</subscript> of Tb<superscript>3+</superscript>, <superscript>7</superscript>F<subscript>0</subscript>-<superscript>5</superscript>D<subscript>1</subscript> of Eu<superscript>3+</superscript> and other gives upconversion luminescence (λ<subscript>ex</subscript> = 980 nm) attributed to <superscript>4</superscript>F<subscript>7/2</subscript>-<superscript>4</superscript>I<subscript>15/2</subscript>, <superscript>2</superscript>H<subscript>11/2</subscript>-<superscript>4</superscript>I<subscript>15/2,</subscript><superscript>4</superscript>S<subscript>3/2</subscript>-<superscript>4</superscript>I<subscript>15/2,</subscript><superscript>4</superscript>F<subscript>9/2</subscript>-<superscript>4</superscript>I<subscript>15/2</subscript>. The photoelectric efficiency of double composite layer device E (FTO/Eu<superscript>3+</superscript>,Tb<superscript>3+</superscript>@ZnO/TiO<subscript>2</subscript>/Nd<superscript>3+</superscript>,Yb<superscript>3+</superscript>@ZnO) attains 2.68%, notably higher than device with undoped zinc oxide (ZnO). Higher efficiency in device E was due to enhancement of the light harvesting achieved by down converters and upconverters by converting Ultraviolet (UV) and near infrared (NIR) radiations to visible emission respectively. Furthermore, Eu<superscript>3+</superscript>,Tb<superscript>3+</superscript>@ZnO acts as confinement layer which suppresses the dark current and also inhibits the charge recombination. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
32
Issue :
12
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
151103993
Full Text :
https://doi.org/10.1007/s10854-021-06216-7