Back to Search Start Over

Highly dose dependent damping-like spin–orbit torque efficiency in O-implanted Pt.

Authors :
Shashank, Utkarsh
Medwal, Rohit
Nakamura, Yoji
Mohan, John Rex
Nongjai, Razia
Kandasami, Asokan
Rawat, Rajdeep Singh
Asada, Hironori
Gupta, Surbhi
Fukuma, Yasuhiro
Source :
Applied Physics Letters; 2021, Vol. 118 Issue 25, p1-5, 5p
Publication Year :
2021

Abstract

Damping-like torque (DLT) arising from the spin Hall effect (SHE) in heavy metals and their alloys has been widely explored for applications in spin–orbit torque MRAM, auto-oscillations, spin waves, and domain wall motion. In conventional materials, the DLT efficiency is limited by intrinsic properties, while attaining strong spin–orbit coupling and higher spin-charge interconversion, with no compromise to electric properties, is the need of the hour. In this Letter, we report more than 3.5 times increase in DLT efficiency, θ<subscript>DL</subscript>, of modified Pt-oxide by employing a better approach of low energy 20 keV O<superscript>+</superscript> ion implantation. The highest fluence of O<superscript>+</superscript> implantation (1 × 10<superscript>17</superscript> ions cm<superscript>−2</superscript>) in Pt enhanced the DLT efficiency from 0.064 to 0.230 and improved the spin transmission for a smaller trade-off in the longitudinal resistivity ( ρ Pt to ρ Pt − Oxide) from 55.4 to 159.5 μΩ cm, respectively. The transverse spin Hall resistivity, ρ SH , is found to be proportional to the square of the longitudinal resistivity, i.e., ρ SH imp ∝ ρ imp 2 , implying that the enhanced SHE in O-implanted Pt is due to a side-jumping mechanism. Further, no break in the twofold as well as mirror symmetry of torques from the O-implanted Pt allows the use of spin-torque ferromagnetic resonance-based line shape analysis to quantify such torques. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00036951
Volume :
118
Issue :
25
Database :
Complementary Index
Journal :
Applied Physics Letters
Publication Type :
Academic Journal
Accession number :
151080800
Full Text :
https://doi.org/10.1063/5.0054779