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THE FIRST PRINCIPLE STUDY OF COMPARISON OF DIVALENT AND TRIVALENT IMPURITY IN RRAM DEVICES USING GGA+U.
- Source :
- Surface Review & Letters; Jun2021, Vol. 28 Issue 06, pN.PAG-N.PAG, 6p
- Publication Year :
- 2021
-
Abstract
- Resistive switching (RS) performances had prodigious attention due to their auspicious potential for data storage. Oxide-based devices with metal insulator metal (MIM) structure are more valuable for RS applications. In this study, we have studied the effect of divalent (nickel) as well as trivalent (aluminum) dopant without and with oxygen vacancy ( V o) in hafnia ( HfO 2) -based resistive random-access memory (RRAM) devices. All calculations are carried out within the full potential linearized augmented plane-wave (FP-LAPW) method based on the WIEN2k code by using generalized gradient approximation (GGA) and generalized gradient approximation with U Hubbard parameters (GGA+U) approach. The studies of the band structure, density of states and charge density reveal that HfNiO<subscript>2</subscript>+Vo are more appropriate dopant to enhance the conductivity for RRAM devices. [ABSTRACT FROM AUTHOR]
- Subjects :
- DENSITY of states
DATA warehousing
HAFNIUM oxide
METALS
DOPING agents (Chemistry)
Subjects
Details
- Language :
- English
- ISSN :
- 0218625X
- Volume :
- 28
- Issue :
- 06
- Database :
- Complementary Index
- Journal :
- Surface Review & Letters
- Publication Type :
- Academic Journal
- Accession number :
- 150964103
- Full Text :
- https://doi.org/10.1142/S0218625X21500396