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A New Approach for the Control and Reduction of Warpage and Residual Stresses in Bonded Wafer.
- Source :
- Micromachines; Apr2021, Vol. 12 Issue 4, p361-361, 1p
- Publication Year :
- 2021
-
Abstract
- A geometrical modification on silicon wafers before the bonding process, aimed to decrease (1) the residual stress caused by glass frit bonding, is proposed. Finite element modeling showed that (2) by introducing this modification, the wafer out-of-plane deflection was decreased by 34%. Moreover, (3) fabricated wafers with the proposed geometrical feature demonstrated an improvement for the (4) warpage with respect to the plain wafers. A benefit for curvature variation and overall shape of the (5) bonded wafers was also observed. [ABSTRACT FROM AUTHOR]
- Subjects :
- SEMICONDUCTOR wafer bonding
SILICON wafers
RESIDUAL stresses
Subjects
Details
- Language :
- English
- ISSN :
- 2072666X
- Volume :
- 12
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- 150894645
- Full Text :
- https://doi.org/10.3390/mi12040361