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Blackbody-like infrared radiation in stacked graphene P–N junction diode.
- Source :
- Japanese Journal of Applied Physics; Jun2021, Vol. 60 Issue SC, p1-4, 4p
- Publication Year :
- 2021
-
Abstract
- The electrical and optical properties of a stacked graphene p–n junction were investigated. N-type and p-type graphene films epitaxially grown on a SiC substrate were directly bonded to each other in a face-to-face manner. The current–voltage characteristics of the graphene junction diode exhibited an Ohmic behavior below 20 V. The conductance increased in the bias range above 20 V and had a peak around 65 V. The emission spectrum and temperature of the graphene p–n junction were measured using Fourier-transform far-infrared (FTIR) spectroscopy and infrared bolometer array. An electrically induced blackbody-like radiation with a peak wavelength of 10.2 μm was observed. Although the temperature change estimated using the bolometer results was 66 K at a power of 1.2 W, the peak wavelength of the FTIR spectrum was constant. An electrically induced blackbody-like far-infrared emission diode with a defined peak wavelength was successfully realized using the stacked graphene p–n junctions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00214922
- Volume :
- 60
- Issue :
- SC
- Database :
- Complementary Index
- Journal :
- Japanese Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 150816658
- Full Text :
- https://doi.org/10.35848/1347-4065/abe208