Blackbody-like infrared radiation in stacked graphene P–N junction diode.

The electrical and optical properties of a stacked graphene p–n junction were investigated. N-type and p-type graphene films epitaxially grown on a SiC substrate were directly bonded to each other in a face-to-face manner. The current–voltage characteristics of the graphene junction diode exhibited an Ohmic behavior below 20 V. The conductance increased in the bias range above 20 V and had a peak around 65 V. The emission spectrum and temperature of the graphene p–n junction were measured using Fourier-transform far-infrared (FTIR) spectroscopy and infrared bolometer array. An electrically induced blackbody-like radiation with a peak wavelength of 10.2 μm was observed. Although the temperature change estimated using the bolometer results was 66 K at a power of 1.2 W, the peak wavelength of the FTIR spectrum was constant. An electrically induced blackbody-like far-infrared emission diode with a defined peak wavelength was successfully realized using the stacked graphene p–n junctions. [ABSTRACT FROM AUTHOR]