On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide.

With the help of transmission Kikuchi diffraction the major physical mechanism of antiferroelectric‐like behavior as well as of the wake‐up effect is determined by Maximilian Lederer, Konrad Seidel, and co‐workers in article number 2100086. Furthermore, guidelines on how to influence this behavior by crystallographic texture and adjacent layers, as well as process conditions are identified. Finally, electric‐field‐induced crystallization is discovered as a new effect in hafnium oxide thin films. [ABSTRACT FROM AUTHOR]