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Synergistic Modulation of Synaptic Plasticity in IGZO-Based Photoelectric Neuromorphic TFTs.
- Source :
- IEEE Transactions on Electron Devices; Apr2021, Vol. 68 Issue 4, p1659-1663, 5p
- Publication Year :
- 2021
-
Abstract
- Neuromorphic devices are of great significance for next generation energy-efficient brain-like computing and perception. Oxide-based photoelectric neuromorphic transistors are very promising due to the proton-related electric-double-layer (EDL) effect and persistent photoconductivity behavior. In this study, indium-gallium-zinc-oxide (IGZO)-based photoelectric neuromorphic thin-film transistors (TFTs) with tunable synaptic plasticity are proposed. Some important synaptic functions, such as excitatory postsynaptic current, multipulse facilitation, and long-term plasticity, can be effectively tuned by the photoelectric synergistic modulation. More importantly, under the photoelectric synergistic modulation, the temporary short-term memory can be converted into permanent long-term memory. And the voltage coordinated modulation can enhance the image in the pixel and the ability of real-time data processing of the input visual information. Our results are very important for the development of photoelectric neuromorphic devices with configurable dynamic functions. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 68
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 150518112
- Full Text :
- https://doi.org/10.1109/TED.2021.3060687