Experimental Investigation of As Preamorphization Implant on Electrical Property of Ti-Based Silicide Contacts.

The impact of As preamorphization implant (PAI) on specific contact resistivity (ρ_c) is investigated for Ti-based Ohmic contacts on n⁺-Si in this article. The ρ_c value of TiSi_x/n+ −Si contacts is greatly improved with low-dose As PAI whereas this improvement is impaired with increased dose of As PAI. The ρ_c results from the joint effort of the reduction of effective Schottky barrier height (SBH) to electrons (φ_bn,eff) , retardation of Ti silicidation, and annihilation of end-of-range (EOR) defects. Besides, the interfacial microstructures of TiSi_x/n⁺ −Si affect ρ_c, correlated with the post metal anneal (PMA). [ABSTRACT FROM AUTHOR]