Cite
Efficient Carrier Recombination in InGaN Pyramidal µ -LEDs Obtained through Selective Area Growth.
MLA
Jiang, Jie’an, et al. “Efficient Carrier Recombination in InGaN Pyramidal µ -LEDs Obtained through Selective Area Growth.” Photonics, vol. 8, no. 5, May 2021, p. 157. EBSCOhost, https://doi.org/10.3390/photonics8050157.
APA
Jiang, J., Xu, H., Chen, L., Yan, L., Hoo, J., Guo, S., Zeng, Y., Guo, W., & Ye, J. (2021). Efficient Carrier Recombination in InGaN Pyramidal µ -LEDs Obtained through Selective Area Growth. Photonics, 8(5), 157. https://doi.org/10.3390/photonics8050157
Chicago
Jiang, Jie’an, Houqiang Xu, Li Chen, Long Yan, Jason Hoo, Shiping Guo, Yuheng Zeng, Wei Guo, and Jichun Ye. 2021. “Efficient Carrier Recombination in InGaN Pyramidal µ -LEDs Obtained through Selective Area Growth.” Photonics 8 (5): 157. doi:10.3390/photonics8050157.