Back to Search Start Over

The enhancement of energy storage performances via combining relaxor behaviors with the crucial point of solubility limit.

Authors :
Shi, Zhifeng
Liu, Yaping
Guo, Fei
Zhao, Shifeng
Source :
Journal of Materials Science: Materials in Electronics; May2021, Vol. 32 Issue 9, p12557-12563, 7p
Publication Year :
2021

Abstract

(1-x)(0.96Na<subscript>0.5</subscript>Bi<subscript>0.5</subscript>TiO<subscript>3</subscript>-0.04BiMnO<subscript>3</subscript>)-xLaMnO<subscript>3</subscript> ternary solid solution films were fabricated by Sol–gel methods. It takes advantage of the large polarization from 0.96NBT-0.04BMO limit solid solution at crucial point of solubility limit to enhance energy density. And LaMnO<subscript>3</subscript> was introduced to improve the energy storage efficiency via the enhancement of relaxor behaviors. It is shown that the relaxor behaviors had been enhanced, and a large energy storage density of 87.9 J/cm<superscript>3</superscript> and efficiency of 56.5% were achieved for 0.85(NBT-BMO)-0.15LM films, with increase ratio of 4.9% and 13.3% respectively than 0.96NBT-0.04BMO solubility limit films. However, when LaMnO<subscript>3</subscript> is beyond a certain limit, the breakdown strength is reduced due to the formation of the current channel. Thus it suggests a alternative method that combining relaxor behaviors with solubility limit films, which provides a way to regulate the energy storage performances for film capacitors. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
32
Issue :
9
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
150343962
Full Text :
https://doi.org/10.1007/s10854-021-05893-8