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Sub-5 nm single crystalline organic p–n heterojunctions.

Authors :
Xiao, Mingchao
Liu, Jie
Liu, Chuan
Han, Guangchao
Shi, Yanjun
Li, Chunlei
Zhang, Xi
Hu, Yuanyuan
Liu, Zitong
Gao, Xike
Cai, Zhengxu
Liu, Ji
Yi, Yuanping
Wang, Shuai
Wang, Dong
Hu, Wenping
Liu, Yunqi
Sirringhaus, Henning
Jiang, Lang
Source :
Nature Communications; 5/13/2021, Vol. 12 Issue 1, p1-7, 7p
Publication Year :
2021

Abstract

The cornerstones of emerging high-performance organic photovoltaic devices are bulk heterojunctions, which usually contain both structure disorders and bicontinuous interpenetrating grain boundaries with interfacial defects. This feature complicates fundamental understanding of their working mechanism. Highly-ordered crystalline organic p–n heterojunctions with well-defined interface and tailored layer thickness, are highly desirable to understand the nature of organic heterojunctions. However, direct growth of such a crystalline organic p–n heterojunction remains a huge challenge. In this work, we report a design rationale to fabricate monolayer molecular crystals based p–n heterojunctions. In an organic field-effect transistor configuration, we achieved a well-balanced ambipolar charge transport, comparable to single component monolayer molecular crystals devices, demonstrating the high-quality interface in the heterojunctions. In an organic solar cell device based on the p–n junction, we show the device exhibits gate-tunable open-circuit voltage up to 1.04 V, a record-high value in organic single crystalline photovoltaics. Realizing organic p–n junctions based on ordered crystalline materials with dimensions comparable to the exciton diffusion length of most organic semiconductors remains a challenge. Here, the authors report a strategy to form molecular monolayer crystal-based p–n junctions with thickness below 5 nm. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20411723
Volume :
12
Issue :
1
Database :
Complementary Index
Journal :
Nature Communications
Publication Type :
Academic Journal
Accession number :
150303496
Full Text :
https://doi.org/10.1038/s41467-021-23066-3