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Effect of Fe atomic layers at the ferromagnet–semiconductor interface on temperature-dependent spin transport in semiconductors.

Authors :
Yamada, M.
Shiratsuchi, Y.
Kambe, H.
Kudo, K.
Yamada, S.
Sawano, K.
Nakatani, R.
Hamaya, K.
Source :
Journal of Applied Physics; 5/14/2021, Vol. 129 Issue 18, p1-7, 7p
Publication Year :
2021

Abstract

Using artificially controlled ferromagnet (FM)–semiconductor (SC) interfaces, we study the decay of the nonlocal spin signals with increasing temperature in SC-based lateral spin-valve devices. When more than five atomic layers of Fe are inserted at the FM/SC interfaces, the temperature-dependent spin injection/detection efficiency (P inj / det ) can be interpreted in terms of the T 3 2 law, meaning a model of the thermally excited spin waves in the FM electrodes. For the FM/SC interfaces with the insufficient insertion of Fe atomic layers, on the other hand, the decay of P inj / det is more rapid than the T 3 2 curve. Using magneto-optical Kerr effect measurements, we find that more than five atomic layers of Fe inserted between FM and SC enable us to enhance the ferromagnetic nature of the FM/SC heterointerfaces. Thus, the ferromagnetism in the ultra-thin FM layer just on top of SC is strongly related to the temperature-dependent nonlocal spin transport in SC-based lateral spin-valve devices. We propose that the sufficient ferromagnetism near the FM/SC interface is essential for high-performance FM–SC hybrid devices above room temperature. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00218979
Volume :
129
Issue :
18
Database :
Complementary Index
Journal :
Journal of Applied Physics
Publication Type :
Academic Journal
Accession number :
150294677
Full Text :
https://doi.org/10.1063/5.0048321