Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates.

MLA

Nagasawa, Yosuke, et al. “Discrete AlN Mole Fraction of n/12 (n = 4–8) in Ga-Rich Zones Functioning as Electron Pathways Created in Nonflat AlGaN Layers Grown on High-Miscut Sapphire Substrates.” Journal of Applied Physics, vol. 129, no. 16, Apr. 2021, pp. 1–9. EBSCOhost, https://doi.org/10.1063/5.0042036.

APA

Nagasawa, Y., Hirano, A., Ippommatsu, M., Sako, H., Hashimoto, A., Sugie, R., Honda, Y., Amano, H., Akasaki, I., Kojima, K., & Chichibu, S. F. (2021). Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates. Journal of Applied Physics, 129(16), 1–9. https://doi.org/10.1063/5.0042036

Chicago

Nagasawa, Yosuke, Akira Hirano, Masamichi Ippommatsu, Hideki Sako, Ai Hashimoto, Ryuichi Sugie, Yoshio Honda, et al. 2021. “Discrete AlN Mole Fraction of n/12 (n = 4–8) in Ga-Rich Zones Functioning as Electron Pathways Created in Nonflat AlGaN Layers Grown on High-Miscut Sapphire Substrates.” Journal of Applied Physics 129 (16): 1–9. doi:10.1063/5.0042036.