Investigation of Degradation Behavior During Illuminated Negative Bias Temperature Stress in P-Channel Low-Temperature Polycrystalline Silicon Thin-Film Transistors.

MLA

Wang, Yu-Xuan, et al. “Investigation of Degradation Behavior During Illuminated Negative Bias Temperature Stress in P-Channel Low-Temperature Polycrystalline Silicon Thin-Film Transistors.” IEEE Electron Device Letters, vol. 42, no. 5, May 2021, pp. 712–15. EBSCOhost, https://doi.org/10.1109/LED.2021.3068423.

APA

Wang, Y.-X., Chang, T.-C., Tai, M.-C., Wu, C.-C., Tu, Y.-F., Chen, J.-J., Huang, W.-C., Shih, Y.-S., Chen, Y.-A., Huang, J.-W., & Sze, S. (2021). Investigation of Degradation Behavior During Illuminated Negative Bias Temperature Stress in P-Channel Low-Temperature Polycrystalline Silicon Thin-Film Transistors. IEEE Electron Device Letters, 42(5), 712–715. https://doi.org/10.1109/LED.2021.3068423

Chicago

Wang, Yu-Xuan, Ting-Chang Chang, Mao-Chou Tai, Chia-Chuan Wu, Yu-Fa Tu, Jian-Jie Chen, Wei-Chen Huang, et al. 2021. “Investigation of Degradation Behavior During Illuminated Negative Bias Temperature Stress in P-Channel Low-Temperature Polycrystalline Silicon Thin-Film Transistors.” IEEE Electron Device Letters 42 (5): 712–15. doi:10.1109/LED.2021.3068423.