In₂Se₃/Silicon-on-Insulator Heterojunction Phototransistor for Low Noise Dual-Band Detection.

In this study, high-performance In₂Se₃/Silicon-on-Insulator (SOI) heterojunction field-effect transistor photodetector is fabricated. The In₂Se₃/Si heterostructure phototransistor exhibits dual-band detection with a maximum responsivity of 12 A/W and 41 A/W for illumination of 405 nm and 800 nm wavelengths, respectively. This phototransistor has shown a lower noise-equivalent power of 6.8 fW.Hz^−1/2 and higher detectivity of 2.9 × 10¹³cm.Hz^−1/2W⁻¹. Flicker noise dominates the In₂Se₃/SOI phototransistor with a corner frequency of 3 Hz. The device’s enhanced performance is due to the improved synergistic effect with efficient electron-hole dissociation in the heterojunction. This heterostructure based photodetector can be of great interest for dual-band (Ultra-violet and visible) detection in imaging, optical communication and healthcare applications. [ABSTRACT FROM AUTHOR]