Cite
High‐performance silicon‐based PbSe-CQDs infrared photodetector.
MLA
Chen, Pengyu, et al. “High‐performance Silicon‐based PbSe-CQDs Infrared Photodetector.” Journal of Materials Science: Materials in Electronics, vol. 32, no. 7, Apr. 2021, pp. 9452–62. EBSCOhost, https://doi.org/10.1007/s10854-021-05609-y.
APA
Chen, P., Wu, Z., Shi, Y., Li, C., Wang, J., Yang, J., Dong, X., Gou, J., Wang, J., & Jiang, Y. (2021). High‐performance silicon‐based PbSe-CQDs infrared photodetector. Journal of Materials Science: Materials in Electronics, 32(7), 9452–9462. https://doi.org/10.1007/s10854-021-05609-y
Chicago
Chen, Pengyu, Zhiming Wu, Yuanlin Shi, Chunyu Li, Jinquan Wang, Jun Yang, Xiang Dong, Jun Gou, Jun Wang, and Yadong Jiang. 2021. “High‐performance Silicon‐based PbSe-CQDs Infrared Photodetector.” Journal of Materials Science: Materials in Electronics 32 (7): 9452–62. doi:10.1007/s10854-021-05609-y.