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Graphene-carbon nitride interface-geometry effects on thermal rectification: a molecular dynamics simulation.
- Source :
- Nanotechnology; 5/21/2021, Vol. 32 Issue 21, p1-6, 6p
- Publication Year :
- 2021
-
Abstract
- In this paper we expand our previous study on phonon thermal rectification (TR) exhibited in a hybrid graphene-carbon nitride system (G−C<subscript>3</subscript>N) to investigate the system's behavior under a wider range of temperature differences, between the two employed baths, and the effects of media-interface geometry on the rectification factor. Our simulation results reveal a sigmoid relation between TR and temperature difference, with a sample-size depending upper asymptote occurring at generally large temperature differences. The achieved TR values are significant and go up to around 120% for ΔT = 150 K. Furthermore, the consideration of varying media-interface geometries yields a non-negligible effect on TR and highlights areas for further investigation. Finally, calculations of Kapitza resistance at the G-C<subscript>3</subscript>N interface are performed for assisting us in the understanding of interface-geometry effects on TR. [ABSTRACT FROM AUTHOR]
- Subjects :
- MOLECULAR dynamics
NITRIDES
INTERFACIAL resistance
GRAPHENE synthesis
Subjects
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 32
- Issue :
- 21
- Database :
- Complementary Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 149888751
- Full Text :
- https://doi.org/10.1088/1361-6528/abe786