High sensitivity x-ray detectors based on 4H-SiC p-i-n structure with 80 μm thick intrinsic layer.

In this work, a large size x-ray detector with a 25 mm² active area is demonstrated based on a thick 4H-SiC p-i-n structure. The detector exhibits obvious merits of high photon sensitivity over 4 × 10⁴μC Gy⁻¹ cm⁻², good photon-response linearity, and high-temperature operation compatibility. Meanwhile, due to the ultralow leakage current level achieved, single photon detection performance for x-ray photons is further realized with energy resolutions of 1.1 and 4.9 keV at 5.9 and 59.5 keV, respectively. This work thus suggests the significant potentials of wide-bandgap SiC semiconductor for photon-resolved x-ray detection in a harsh environment. [ABSTRACT FROM AUTHOR]