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GaN MIS-HEMTs With Surface Reinforcement for Suppressed Hot-Electron-Induced Degradation.
- Source :
- IEEE Electron Device Letters; Apr2021, Vol. 42 Issue 4, p489-492, 4p
- Publication Year :
- 2021
-
Abstract
- We report a processing technique to form a surface reinforcement layer (SRL) in GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) with the aim to suppress device dynamic on-resistance (RON) degradation caused by long-term hot-electron stress. The SRL is a crystalline (Al)GaON layer formed by reconstruction of the heterojunction surface through plasma oxidation and high temperature annealing. MIS-HEMTs with SRL exhibit substantially suppressed dynamic RON degradation than the conventional devices without SRL, after long-term hot-electron stress. The (Al)GaON SRL exhibits substantially enhanced thermal stability and strong immunity to energetic carriers. The SRL-enabled suppression of hot-electron-induced degradation is further verified by the electroluminescence characterizations. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 42
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 149509812
- Full Text :
- https://doi.org/10.1109/LED.2021.3057933