Cite
Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications.
MLA
Kumar, R. J., et al. “Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications.” MRS Online Proceedings Library, vol. 763, no. 1, Jan. 2003, pp. 1–6. EBSCOhost, https://doi.org/10.1557/PROC-763-B2.4.
APA
Kumar, R. J., Gutmann, R. J., Borrego, J. M., Dutta, P. S., Wang, C. A., Martinelli, R. U., & Nichols, G. (2003). Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications. MRS Online Proceedings Library, 763(1), 1–6. https://doi.org/10.1557/PROC-763-B2.4
Chicago
Kumar, R. J., R. J. Gutmann, J. M. Borrego, P. S. Dutta, C. A. Wang, R. U. Martinelli, and G. Nichols. 2003. “Recombination Parameters in InGaAsSb Epitaxial Layers for Thermophotovoltaic Applications.” MRS Online Proceedings Library 763 (1): 1–6. doi:10.1557/PROC-763-B2.4.