Enhanced performance of antimony selenide thin film solar cell using PbI2 as a dopant.

Antimony selenide (Sb₂Se₃) is an emerging photovoltaic material. We demonstrate that PbI₂ is an effective p-type dopant for Sb₂Se₃. The Sb₂Se₃ film was doped by PbI₂ by thermal diffusion. Both the hole concentration and conductivity are dramatically increased by doping. We fabricated the Sb₂Se₃ solar cell using C₆₀ as an electron transport layer by vacuum thermal evaporation. By PbI₂ doping, the open-circuit voltage (V_oc) is increased from 0.32 to 0.38 V, and the power conversion efficiency is improved from 2.87% to 4.43%. This work provides an effective p-type dopant for Sb₂Se₃. [ABSTRACT FROM AUTHOR]