Ohmic metal/Hg1-xCdxTe (x ≈ 0.3) contacts.

Some technological features of p-type Hg_1-xCd_xTe (x ≈ 0.3) liquid phase epitaxy layers grown on Cd_1-yZn_yTe (y ≈ 0.04) substrates are briefly discussed. Energy dispersive analysis of mercury-cadmium-telluride (MCT) layers and metal contacts (Au(In)/Cr(Mo,Ti)) to MCT layers together with their current-voltage characteristics at T ≈ 80 and 300 K are considered. It is shown that Cr(Mo,Ti)/MCT contacts have ohmic characteristics or close to them at T ≈ 80 and 300 K for both n- and p-type MCT layers. This gives the opportunity to form ohmic contacts to n- and p-type pads in one technological cycle. The contact resistance R_c is much smaller as compared to the HgCdTe p-n junction resistance R₀[ R_cA (< 10^–2 Ω cm²) ≪ R₀A (> 10³ Ω cm²), where R₀ is the zero bias diode resistance at T = 80 K, and A is the MCT (x ≈ 0.3) junction area]. So, such contacts are appropriate for the fabrication of photovoltaic HgCdTe detectors. [ABSTRACT FROM AUTHOR]