The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga 2 O 3 Substrate for Vertical Light Emitting Diodes.

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga₂O₃ substrate via the SiO₂ nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga₂O₃ can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga₂O₃ nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga₂O₃ substrate. [ABSTRACT FROM AUTHOR]