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A 33–41-GHz SiGe-BiCMOS Digital Step Attenuator With Minimized Unit Impedance Variation.

Authors :
Zhao, Chenxi
Guo, Jiawei
Liu, Huihua
Yu, Yiming
Wu, Yunqiu
Kang, Kai
Source :
IEEE Transactions on Very Large Scale Integration (VLSI) Systems; Mar2021, Vol. 29 Issue 3, p568-579, 12p
Publication Year :
2021

Abstract

A 5-bit active digital step attenuator (DSA), which simultaneously achieves low amplitude and phase variations, is proposed for wideband phased-array applications. The input and output impedances for each attenuation unit under the reference state and the attenuation state can remain basically the same. Therefore, the amplitude and phase errors caused by a load impedance mismatch between each unit can be alleviated. Implemented in 130-nm silicon–germanium (SiGe) BiCMOS technology platform, the proposed DSA provides a maximum attenuation range of 15.5 dB with 0.5-dB steps. It exhibits an insertion loss (IL) less than 13 dB and input/output return losses less than −10 dB from 31 to 41 GHz. In addition, with the help of minimized amplitude and phase variations, the DSA exhibits a root-mean-square (rms) amplitude error less than 0.2 dB and an rms phase error less than 2.5° at 33–41 GHz, which are the lowest such errors ever reported. The chip core area of the DSA is 0.22 mm2 (0.5 mm $\times0.44$ mm). It shows a suitable performance for 5G applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10638210
Volume :
29
Issue :
3
Database :
Complementary Index
Journal :
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Publication Type :
Academic Journal
Accession number :
148969962
Full Text :
https://doi.org/10.1109/TVLSI.2020.3046016