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Demonstration of wafer‐level light emitting diode with very high output power.
- Source :
- Electronics Letters (Wiley-Blackwell); Dec2014, Vol. 50 Issue 25, p1970-1972, 3p
- Publication Year :
- 2014
-
Abstract
- Based on the optimised high‐voltage network design and the resistance matching technique, a wafer‐level light emitting diode (WL‐LED) with a light output power of 157 W has been successfully demonstrated for the first time. The external quantum efficiency of the fabricated WL‐LED was measured to be 24% at a driving current of 4 A. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00135194
- Volume :
- 50
- Issue :
- 25
- Database :
- Complementary Index
- Journal :
- Electronics Letters (Wiley-Blackwell)
- Publication Type :
- Academic Journal
- Accession number :
- 148782012
- Full Text :
- https://doi.org/10.1049/el.2014.3657