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The Behavioural Model of Graphene Field-effect Transistor.

Authors :
Łuszczek, Maciej
Turzyński, Marek
Świsulski, Dariusz
Source :
International Journal of Electronics & Telecommunications; 2020, Vol. 66 Issue 4, p753-758, 6p
Publication Year :
2020

Abstract

The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a "black box" with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-state characteristics taking also into account GFET capacitances. The authors' model is defined by a relatively small number of equations which are not nested and all the parameters can be easily extracted. It was demonstrated that the proposed model allows to simulate the steady-state characteristics with the accuracy approximately as high as in the case of the physical model. The presented compact GFET model can be used for circuit or system-level simulations in the future. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20818491
Volume :
66
Issue :
4
Database :
Complementary Index
Journal :
International Journal of Electronics & Telecommunications
Publication Type :
Academic Journal
Accession number :
148270348
Full Text :
https://doi.org/10.24425/ijet.2020.134037