Characteristics of Resistive Switching of SRO/SrZrO3/Pt Stack Processed at Full Room Temperature.

The resistance switching behavior of SRO/SZO/Pt devices is investigated in room temperature (RT). First, it was manufactured as a single cell to see its electrical characteristics, and it was operated by bipolar resistive switching (BRS). In addition, to analyze the switching mechanism of the cell deposited at room temperature, an area dependence test and a temperature dependence test were performed. As a result, in the low resistance state (LRS) there was no area-dependent and temperature-dependent, whereas in the high resistance state (HRS), the area-dependent and temperature-dependent local conduction filament model was estimated. In addition, an 8 × 8 array is fabricated using a room-temperature process that is commercially advantageous. The electrical characteristics are excellent; stable retention characteristics (125 °C, 2 h) and stable switching cycle (10⁹) operations are observed, which are applicable to next-generation memory. [ABSTRACT FROM AUTHOR]