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The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE.
- Source :
- Technical Physics Letters; Dec2020, Vol. 46 Issue 12, p1211-1214, 4p
- Publication Year :
- 2020
-
Abstract
- We have studied the growth of GaN layers by the metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates at various reactor pressures, including ones above the atmospheric level. It is established that the epitaxial growth at higher pressures does not affect the crystalline perfection of epilayers, their electron mobility, and background impurity level, but leads to the formation of GaN surface with lower lateral scale of inhomogeneities. In addition, the reactor pressure influences the ratio of edge and impurity lines in the photoluminescence spectra and leakage current level in reversely biased Schottky barriers. [ABSTRACT FROM AUTHOR]
- Subjects :
- ELECTRON mobility
SCHOTTKY barrier
EPITAXY
PRESSURE
PHOTOLUMINESCENCE
Subjects
Details
- Language :
- English
- ISSN :
- 10637850
- Volume :
- 46
- Issue :
- 12
- Database :
- Complementary Index
- Journal :
- Technical Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 148115970
- Full Text :
- https://doi.org/10.1134/S1063785020120263