The Study on Structural and Photoelectric Properties of Zincblende InGaN via First Principles Calculation.

In this paper, the structure and photoelectric characteristics of zincblende In_xGa_1−xN alloys are systematically calculated and analyzed based on the density functional theory, including the lattice constant, band structure, distribution of electronic states, dielectric function, and absorption coefficient. The calculation results show that with the increase in x, the lattice constants and the supercell volume increase, whereas the bandgap tends to decrease, and In_xGa_1−xN alloys are direct band gap semiconductor materials. In addition, the imaginary part of the dielectric function and the absorption coefficient are found to redshift with the increase in indium composition, expanding the absorption range of visible light. By analyzing the lattice constants, polarization characteristics, and photoelectric properties of the In_xGa_1−xN systems, it is observed that zincblende In_xGa_1−xN can be used as an alternative material to replace the channel layer of wurtzite In_xGa_1−xN heterojunction high electron mobility transistor (HEMT) devices to achieve the manufacture of HEMT devices with higher power and higher frequency. In addition, it also provides a theoretical reference for the practical application of In_xGa_1−xN systems in optoelectronic devices. [ABSTRACT FROM AUTHOR]