Back to Search
Start Over
Numerical Simulation of the Influence of the Gap State of a-Si:H on the Characteristics of a-Si:H p-i-n/OLED Coupling Device.
- Source :
- MRS Online Proceedings Library; 2003, Vol. 762 Issue 1, p1-6, 6p
- Publication Year :
- 2003
Details
- Language :
- English
- ISSN :
- 19464274
- Volume :
- 762
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- MRS Online Proceedings Library
- Publication Type :
- Conference
- Accession number :
- 147737360
- Full Text :
- https://doi.org/10.1557/PROC-762-A18.18