Self-powered ultraviolet–visible–near infrared perovskite/silicon hybrid photodetectors based on a novel Si/SnO2/MAPbI3/MoO3 heterostructure.

We developed a self-powered broadband perovskite/silicon hybrid photodetector based on a novel heterostructure of Si/SnO₂/MAPbI₃/MoO₃. The insertion of SnO₂ and MoO₃ was effective in reducing the recombination of photogenerated carriers. By optimizing the thickness of the SnO₂ layer, the detection capabilities of the hybrid photodetectors were significantly improved. The best-performing photodetector had a 40 nm SnO₂ layer, showing a detectivity of 2.23 × 10¹² Jones with a responsivity of 50.9 mA W⁻¹ at 815 nm and a photocurrent/dark current ratio of 3.37 × 10⁴ under zero bias. Furthermore, the photodetectors were sensitive to broadband irradiation from 300 to 1150 nm. [ABSTRACT FROM AUTHOR]