Cite
Nitride-Based Light-Emitting Diodes Grown on Particular Substrates: ZrB2, (3038) 4H-SiC and r -faced Sapphire.
MLA
Kamiyama, Satoshi, et al. “Nitride-Based Light-Emitting Diodes Grown on Particular Substrates: ZrB2, (3038) 4H-SiC and r -Faced Sapphire.” MRS Online Proceedings Library, vol. 831, no. 1, Apr. 2004, pp. 91–101. EBSCOhost, https://doi.org/10.1557/PROC-831-E10.6.
APA
Kamiyama, S., Iwaya, M., Amano, H., & Akasaki, I. (2004). Nitride-Based Light-Emitting Diodes Grown on Particular Substrates: ZrB2, (3038) 4H-SiC and r -faced Sapphire. MRS Online Proceedings Library, 831(1), 91–101. https://doi.org/10.1557/PROC-831-E10.6
Chicago
Kamiyama, Satoshi, Motoaki Iwaya, Hiroshi Amano, and Isamu Akasaki. 2004. “Nitride-Based Light-Emitting Diodes Grown on Particular Substrates: ZrB2, (3038) 4H-SiC and r -Faced Sapphire.” MRS Online Proceedings Library 831 (1): 91–101. doi:10.1557/PROC-831-E10.6.