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Low-temperature synthesis of Ti3Al(Sn)C2 solid solution using replacement reaction.
- Source :
- Journal of Materials Science: Materials in Electronics; 2020, Vol. 31 Issue 22, p20601-20610, 10p
- Publication Year :
- 2020
-
Abstract
- The synthesis of Ti<subscript>3</subscript>Al(Sn)C<subscript>2</subscript> usually uses elemental powder as the raw material, and the synthesis temperature is up to 1500 °C. Low-temperature ceramic sintering is the key to inhibit the formation of competitive phases and reduce the ceramic sintering cost. In this paper, a new method of low-temperature synthesis of Ti<subscript>3</subscript>Al(Sn)C<subscript>2</subscript> was proposed, and high-purity Ti<subscript>3</subscript>Al(Sn)C<subscript>2</subscript> sample was successfully prepared at low temperature by using the replacement reaction method. Research shows that the temperature of 600 °C for 5 h is the optimal process conditions for Ti<subscript>3</subscript>Al(Sn)C<subscript>2</subscript> synthesis. Furthermore, the introduction of Sn changed the high-temperature oxidation resistance of Ti<subscript>3</subscript>AlC<subscript>2</subscript>. Compared to pristine Ti<subscript>3</subscript>AlC<subscript>2</subscript>, the oxidation resistance of Ti<subscript>3</subscript>Al(Sn)C<subscript>2</subscript> at 900 °C increases by 33%. The comparative analysis of the formation energy of replacement Ti sites and Al sites shows that the formation energy of Sn-replaced Al sites is lower. These results have broad reference implications for low-temperature synthesis of other MAX phases. [ABSTRACT FROM AUTHOR]
- Subjects :
- SUBSTITUTION reactions
LOW temperatures
HIGH temperatures
RAW materials
Subjects
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 31
- Issue :
- 22
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 147480159
- Full Text :
- https://doi.org/10.1007/s10854-020-04580-4