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High-Frequency Switching Properties and Low Oxide Electric Field and Energy Loss in a Reverse-Channel 4H-SiC UMOSFET.
- Source :
- IEEE Transactions on Electron Devices; Oct2020, Vol. 67 Issue 10, p4046-4053, 8p
- Publication Year :
- 2020
-
Abstract
- A reverse-channel 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor (UMOSFET) (RC-MOS) is proposed in this article. The RC-MOS is demonstrated to have low specific ON-resistance (R<subscript>ON,sp</subscript>) by numerical simulation. The trench oxide in the RC-MOS is fully protected by the n+ source, the p-shield, and the p-base regions. Thus, a reduced trench corner field far below 3 MV/cm can be achieved in both the OFF- and ON-state. Furthermore, the gate-to-drain charge (Q<subscript>GD</subscript>) of the RC-MOS is 33 nC/cm<superscript>2</superscript>, which is much lower than that of the dual buffer layer MOSFET (DB-MOS), owing to little overlap between the gate and drain electrodes. Consequently, the RC-MOS exhibits the superior figures of merit Q<subscript>GD</subscript> × R<subscript>ON,SP</subscript> = 82m Ω ⋅ nC. Due to the low reverse transfer capacitance and gate charges in the RC-MOS, the total switching loss of $570~μJ/cm<superscript>2</superscript> is decreased by 64.5% in comparison to that of the DB-MOS. These superior properties show that the proposed UMOSFET can be a good candidate for further improvements in the gate oxide reliability and high-frequency performance of SiC MOSFETs. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 67
- Issue :
- 10
- Database :
- Complementary Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 147319553
- Full Text :
- https://doi.org/10.1109/TED.2020.3005899