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Sintering characteristics and microwave dielectric properties of a new temperature-stable ceramic of Ce0.5Sm0.5O1.75.

Authors :
Wang, Ying
Tang, Tian-Liang
Deng, Jing-Yu
Li, Ming-Xue
Shi, Li-Wei
Xia, Wang-Suo
Source :
Journal of Materials Science: Materials in Electronics; 2020, Vol. 31 Issue 21, p19130-19135, 6p
Publication Year :
2020

Abstract

The novel temperature-stable microwave dielectric ceramics of Ce<subscript>0.5</subscript>Sm<subscript>0.5</subscript>O<subscript>1.75</subscript> were fabricated via the mixed oxide reaction method, with the detail information including crystal phase, microstructure, sintering behavior and microwave dielectric properties being systematically investigated. For crystal phase, all the diffraction patterns were indexed as cubic fluorite-type structure with Fm-3m (225) space group and exhibited a single phase with no obvious peak position shift. The grain growth was analyzed by density and average grain size. For microwave dielectric properties of Ce<subscript>0.5</subscript>Sm<subscript>0.5</subscript>O<subscript>1.75</subscript> ceramics, the dielectric constant value (ε<subscript>r</subscript>) was dependent on density. The quality factors (Q × f values) were investigated considered with average grain size. And the temperature coefficient of resonant frequency (τ<subscript>f</subscript> value) had no significant change during the sintering temperature range, which was found consistent with the trend of the dielectric constant value. The Ce<subscript>0.5</subscript>Sm<subscript>0.5</subscript>O<subscript>1.75</subscript> ceramics sintered at 1475 °C for 4 h exhibited good microwave dielectric performances with ε<subscript>r</subscript> = 18.21, Q × f = 70,500 GHz, and τ<subscript>f </subscript>= − 16.4 ppm/°C. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
31
Issue :
21
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
147299437
Full Text :
https://doi.org/10.1007/s10854-020-04449-6