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Comparative Performance and Assessment Study of a Current-Fed DC-DC Resonant Converter Combining Si, SiC, and GaN-Based Power Semiconductor Devices.

Authors :
Rodríguez-Benítez, Oscar Miguel
Ponce-Silva, Mario
Aquí-Tapia, Juan Antonio
Claudio-Sánchez, Abraham
Vela-Váldes, Luis Gerardo
Lozoya-Ponce, Ricardo Eliu
Cortés-García, Claudia
Source :
Electronics (2079-9292); Nov2020, Vol. 9 Issue 11, p1982-1982, 1p
Publication Year :
2020

Abstract

This paper focuses on the main reasons of low efficiency in a current-fed DC-DC resonant converter applied to photovoltaic (PV) isolated systems, comparing the effects derived by the overlapping time in the gate-signals (gate-source voltage) combining silicon (Si), silicon carbide (SiC), and gallium nitride (GaN)-based power devices. The results show that unidirectional switches (metal–oxide–semiconductor field-effect transistors (MOSFETs) plus diode) present hard switching as a result of the diode preventing the MOSFET capacitance of being discharged. The effectiveness of the converter was verified with a 200-W prototype with an input voltage range of 0–30.3 V, an output voltage of 200 V, and a switching frequency of 200 kHz. The reduction losses by applying GaN versus Si and SiC technologies are 66.49% and 53.57%, respectively. Alternatively, by applying SiC versus Si devices the reduction loss is 27.84%. Finally, according to the results, 60% of losses were caused by the diodes on both switches. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20799292
Volume :
9
Issue :
11
Database :
Complementary Index
Journal :
Electronics (2079-9292)
Publication Type :
Academic Journal
Accession number :
147273808
Full Text :
https://doi.org/10.3390/electronics9111982