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Hybrid-gate structure designed for high-performance normally-off p-GaN high-electron-mobility transistor.
- Source :
- Japanese Journal of Applied Physics; Nov2020, Vol. 59 Issue 11, p1-5, 5p
- Publication Year :
- 2020
-
Abstract
- A normally-off hybrid-gate p-GaN high-electron-mobility transistor (HEMT) is presented in this paper. The gate region is designed as a parallel connection between the Schottky-gate and the metal–insulator–semiconductor gate by inserting a dielectric layer under part of the gate metal. Compared to the conventional Schottky-gate p-GaN HEMT, the fabricated hybrid-gate p-GaN HEMT showed a higher threshold voltage of 3.2 V (increases by 167%), and the maximum transconductance is only a slight decrease (reduces by 23%). At the same time, the forward gate leakage current of the hybrid-gate structure is smaller. Furthermore, through simulation, we revealed that the increase in the threshold voltage originated from the delayed full opening of the two-dimensional electron gas. And we also find that the parameters of the gate dielectric layer have a great influence on the performance of the device. The results show that the hybrid-gate structure is a more promising device structure. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00214922
- Volume :
- 59
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- Japanese Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 147159348
- Full Text :
- https://doi.org/10.35848/1347-4065/abbe67