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Magnetocurrent in a bipolar spin transistor at room temperature.
- Source :
- Applied Physics Letters; 10/4/2004, Vol. 85 Issue 14, p2959-2961, 3p, 1 Diagram, 4 Graphs
- Publication Year :
- 2004
-
Abstract
- A spin transistor which consists of a metallic giant magnetoresistance emitter, a copper base, and a p-n junction was prepared on a Si(100) wafer. The emitter current changes from 1 mA at a magnetically parallel state to 0.968 mA at a magnetically antiparallel state. At the same states the base currents were 29.3 μA and 333 nA, respectively, which gave a magnetocurrent ratio of ∼8600% and a transfer ratio of 3×10<superscript>-2</superscript> at room temperature for a common collector configuration. The sensitivity of this spin device is higher than 4000%/Oe. The memory effect and the high performance make it possible for practical usage. The working principle of this kind of three-terminal spin device can be simply described by circuit theory. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 85
- Issue :
- 14
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 14713327
- Full Text :
- https://doi.org/10.1063/1.1796522