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Microwave Volt–Impedance Spectroscopy of Semiconductors.

Authors :
Reznik, A. N.
Vostokov, N. V.
Vdovicheva, N. K.
Shashkin, V. I.
Source :
Technical Physics; Nov2020, Vol. 65 Issue 11, p1859-1865, 7p
Publication Year :
2020

Abstract

The previously proposed technique of microwave volt–impedance spectroscopy of semiconductors has been experimentally verified. The technique allows one to determine the local values of electrical parameters of a semiconductor. The investigations have been carried out on a homogeneous single-crystal GaAs wafer with a system of concentric antennas formed on the top of it. The resolution is determined by the antenna central disk diameter, which has been 12, 27, and 57 μm. A dc bias voltage of 0 V ≤ U ≤ 5 V has been applied between antenna contact pads. The complex Z(f, U) impedance spectrum of each antenna has been measured on a Cascade Microtech probe station in the frequency range of f = 0.1–10 GHz. The electrical characteristics of the semiconductor have been determined from the Z(f, U) spectra by solving the inverse problem. The n-type of the semiconductor has been established, and the contact potential difference at the interface with a metal has been determined. The local values of electron density, mobility and electrical conductivity have been found have been found. The four-point probe Hall effect measurements of the surface-averaged values of the same parameters have shown good agreement of the results for the investigated homogeneous wafer. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
10637842
Volume :
65
Issue :
11
Database :
Complementary Index
Journal :
Technical Physics
Publication Type :
Academic Journal
Accession number :
147069004
Full Text :
https://doi.org/10.1134/S1063784220110237