Structural optoelectronic and morphological investigation in Cu1-xSixO (x≤0<0.0468).

Si plays an important role in improving the conductive behavior of most oxides. Si⁺⁴ in place of Cu²⁺ in CuO have a tendency of attracting more oxygen in the lattice. By doping ∼4% Si in CuO the indirect bandgap is observed to be modified from 1.49 eV to 1.45 eV. Raman and XRD studies detail the structural properties and reveal no extra phase in the solid solutions. The conductivity increased by three orders in the Si doped samples. FESEM studies reveal a change of morphology with Si doping from spherical to nanorod-like formation. [ABSTRACT FROM AUTHOR]