High-power InGaN light emitting diodes grown by molecular beam epitaxy.

Authors :: Johnson, K.
Bousquet, V.
Hooper, S. E.
Kauer, M.
Zellweger, C.
Heffernan, J.
Source :: Electronics Letters (Institution of Engineering & Technology); 9/30/2004, Vol. 40 Issue 20, p1299-1300, 2p
Publication Year :: 2004
Abstract: The highest power InGaN light emitting diodes produced by molecular beam epitaxy are reported. When operated in continuous-wave mode at room temperature, the optical output power of the devices was 3.75 mW at a forward injection current of 20 mA, and the maximum output power was 14.3 mW. The electroluminescence had a peak at 405 nm and a full width half maximum of 15 nm. The electrical characteristics showed a voltage of 4.8 V and a resistance of 31 O at a forward injection current of 20 mA. [ABSTRACT FROM AUTHOR]