P‐232: Laser Assisted Plasma Enhanced Chemical Vapor Deposition for Damage‐Resistive and Reliable Thin Film Encapsulation of Organic Light Emitting Diodes.

Silicon nitride thin film was fabricated using laser‐assisted plasma‐enhanced chemical vapor deposition (LAPECVD) with 193 nm ArF excimer laser. In order to achieve damage‐resistive and reliable thin film encapsulation, the deposition of silicon nitride was performed in two‐step that laser‐assisted CVD (LACVD) and LAPECVD performed on the LACVD thin film. [ABSTRACT FROM AUTHOR]