Back to Search
Start Over
21‐1: Invited Paper: 5291‐ppi Microdisplay Using CAAC‐IGZO FET with Channel Length of 60 nm.
- Source :
- SID Symposium Digest of Technical Papers; Aug2020, Vol. 51 Issue 1, p293-296, 4p
- Publication Year :
- 2020
-
Abstract
- For high‐definition microdisplays with more than several thousands of pixels per inch (ppi), c‐axis‐aligned crystal indium‐gallium‐zinc oxide (CAAC‐IGZO) field‐effect transistors (FETs) are effective devices. Based on such a viewpoint, we have fabricated a 5291‐ppi organic light‐emitting diode (OLED) display using CAAC‐IGZO FETs with a channel length of 60 nm. [ABSTRACT FROM AUTHOR]
- Subjects :
- LIGHT emitting diodes
PIXEL density measurement
FIELD-effect transistors
Subjects
Details
- Language :
- English
- ISSN :
- 0097966X
- Volume :
- 51
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- SID Symposium Digest of Technical Papers
- Publication Type :
- Academic Journal
- Accession number :
- 146080172
- Full Text :
- https://doi.org/10.1002/sdtp.13861