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500-Gb/s/λ Operation of Ultra-Low Power and Low-Temperature-Dependence InP-Based High-Bandwidth Coherent Driver Modulator.
- Source :
- Journal of Lightwave Technology; 9/15/2020, Vol. 38 Issue 18, p5086-5091, 6p
- Publication Year :
- 2020
-
Abstract
- For 64-Gbaud operation and beyond, we developed a power efficient high-bandwidth coherent driver modulator composed of a linear four-channel ultra-low power CMOS driver IC and an InP-based dual-polarization IQ modulator. The CMOS driver was fabricated in 65-nm CMOS technology and showed power dissipation of <1 W owing to the use of an open-drain configuration and a stacked current-mode architecture. Moreover, by optimizing the temperature of the thermoelectric cooler that controls the modulator operating temperature, the coherent driver modulator achieved consumed power of <2.5 W at case temperatures of −5 to 75 °C and <2.8 W under −5 to 85 °C. As far as we know, this is the lowest power dissipation for a coherent driver modulator with an InP modulator chip. In addition, by employing a circuit that suppresses temperature dependence of RF characteristics in the CMOS driver, we achieved the 3-dB electro-optical bandwidth of >44 GHz and the variation of 2.0 GHz under the 25° to 85 °C condition. Furthermore, we obtained good back-to-back bit-error-rate performance in up to dual polarization 80-Gbaud 16-QAM modulation. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07338724
- Volume :
- 38
- Issue :
- 18
- Database :
- Complementary Index
- Journal :
- Journal of Lightwave Technology
- Publication Type :
- Academic Journal
- Accession number :
- 146027809
- Full Text :
- https://doi.org/10.1109/JLT.2020.2998466