A New Technique for Mobility Extraction in MOSFETs in the Presence of Prominent Gate Oxide Trapping: Application to InGaAs MOSFETs.

In the presence of prominent gate oxide trapping, the conventional technique for channel mobility extraction in MOSFETs based on I – V/C – V measurements becomes inadequate. This is the consequence of two different effects associated with oxide traps: gate voltage stretch-out and electron trapping and detrapping in the oxide at the megahertz (MHz)-range frequencies that are commonly utilized. In thin-channel planar InGaAs MOSFETs, both effects are observed and found to result in a severe overestimation of mobile charge and subsequently an underestimation of mobility using I – V/C – V. To address this issue, we demonstrate a new mobility extraction technique (RF- I_D) based on concurrent I – V and S-parameter measurement in the gigahertz (GHz) regime that is largely immune to oxide trapping. Excellent agreement with Hall measurements as well as with theoretical predictions from Poisson–Schrodinger simulations gives confidence to the new technique. Importantly, the new technique is not limited to InGaAs planar MOSFETs, but applies to any device geometry and any material system. Promising mobility ~1100 cm²/V⋅s is found in quantum-well planar InGaAs MOSFETs with a 4-nm-thick channel. [ABSTRACT FROM AUTHOR]