Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions.

MLA

Gong, Hehe, et al. “Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions.” IEEE Transactions on Electron Devices, vol. 67, no. 8, Aug. 2020, pp. 3341–47. EBSCOhost, https://doi.org/10.1109/TED.2020.3001249.

APA

Gong, H., Chen, X., Xu, Y., Chen, Y., Ren, F., Liu, B., Gu, S., Zhang, R., & Ye, J. (2020). Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions. IEEE Transactions on Electron Devices, 67(8), 3341–3347. https://doi.org/10.1109/TED.2020.3001249

Chicago

Gong, Hehe, Xuanhu Chen, Yang Xu, Yanting Chen, Fangfang Ren, Bin Liu, Shulin Gu, Rong Zhang, and Jiandong Ye. 2020. “Band Alignment and Interface Recombination in NiO/β-Ga2O3 Type-II p-n Heterojunctions.” IEEE Transactions on Electron Devices 67 (8): 3341–47. doi:10.1109/TED.2020.3001249.