Impact of local structure on halogen ion migration in layered methylammonium copper halide memory devices.

MLA

Ray, Aniruddha, et al. “Impact of Local Structure on Halogen Ion Migration in Layered Methylammonium Copper Halide Memory Devices.” Journal of Materials Chemistry A, vol. 8, no. 34, Sept. 2020, pp. 17516–26. EBSCOhost, https://doi.org/10.1039/d0ta06248k.

APA

Ray, A., Martín-García, B., Martinelli, A., Spirito, D., Locardi, F., Altamura, D., Giannini, C., Prato, M., Manna, L., & Abdelhady, A. L. (2020). Impact of local structure on halogen ion migration in layered methylammonium copper halide memory devices. Journal of Materials Chemistry A, 8(34), 17516–17526. https://doi.org/10.1039/d0ta06248k

Chicago

Ray, Aniruddha, Beatriz Martín-García, Alberto Martinelli, Davide Spirito, Federico Locardi, Davide Altamura, Cinzia Giannini, Mirko Prato, Liberato Manna, and Ahmed L. Abdelhady. 2020. “Impact of Local Structure on Halogen Ion Migration in Layered Methylammonium Copper Halide Memory Devices.” Journal of Materials Chemistry A 8 (34): 17516–26. doi:10.1039/d0ta06248k.