Epitaxial BiFeO3 thin films on Si.

Authors :: Wang, J.
Zheng, H.
Ma, Z.
Prasertchoung, S.
Wuttig, M.
Droopad, R.
Yu, J.
Eisenbeiser, K.
Ramesh, R.
Source :: Applied Physics Letters; 9/27/2004, Vol. 85 Issue 13, p2574-2576, 3p, 1 Chart, 4 Graphs
Publication Year :: 2004
Abstract: BiFeO<subscript>3</subscript> was studied as an alternative environmentally clean ferro/piezoelectric material. 200-nm-thick BiFeO<subscript>3</subscript> films were grown on Si substrates with SrTiO<subscript>3</subscript> as a template layer and SrRuO<subscript>3</subscript> as bottom electrode. X-ray and transmission electron microscopy studies confirmed the epitaxial growth of the films. The spontaneous polarization of the films was ∼45 μC/cm<superscript>2</superscript>. Retention measurement up to several days showed no decay of polarization. A piezoelectric coefficient (d<subscript>33</subscript>) of ∼60 pm/V was observed, which is promising for applications in micro-electro-mechanical systems and actuators. [ABSTRACT FROM AUTHOR]